Ljubisa Stevanovic leads a multi-disciplinary team developing Silicon Carbide (SiC) power devices, advanced packaging, and power electronic applications. The team has commercialized SiC power MOSFETs with best-in-class performance, robustness, and reliability. The 1.2kV SiC MOSFET is the industry’s first product to pass the stringent AEC-Q101 automotive qualification standard at 200oC. His team has also developed vertically integrated chip-to-converter solutions to overcome obstacles to SiC product insertion. These solutions include low inductance power modules and robust gate drivers. Leveraging that technology platform, GE has already fielded SiC converters for aerospace and industrial applications. A recent highlight is the experimental demonstration of a MW-scale SiC PV inverter with a best-in-class EU weighted efficiency of 99.0%.
Ljubisa has co-authored 51 peer reviewed publications and has 37 US patents. He has given invited and keynote talks at technical conferences and symposia. He has served as the Industry Liaison on the IEEE Power Electronics Society’s Administrative Committee. Ljubisa is also a recipient of several internal and external awards, including a 2012 GE Hero of Growth by the CEO and Chairman of GE.
Ljubisa received the Diploma Engineer degree in Electrical Engineering from Belgrade University, Serbia, in 1988, and MS and PhD degrees in Power Electronics from the California Institute of Technology in 1989 and 1995, respectively.
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